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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Khokhar, Ali
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Topics
Publications (6/6 displayed)
- 2018Real-time monitoring and gradient feedback enable accurate trimming of ion-implanted silicon photonic devicescitations
- 2017Transversal symmetry breaking in novel photonic crystal waveguide
- 2017Laser annealing of low temperature deposited silicon waveguidescitations
- 2017Phase trimming of Mach-Zehnder Interferometers by laser annealing of germanium implanted waveguidescitations
- 2017Post-fabrication phase trimming of Mach-Zehnder Interferometers by laser annealing of germanium implanted waveguidescitations
- 2016Data for Suspended silicon mid-infrared waveguide devices with subwavelength grating metamaterial cladding
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article
Real-time monitoring and gradient feedback enable accurate trimming of ion-implanted silicon photonic devices
Abstract
Fabrication errors pose significant challenges on silicon photonics, promoting postfabrication trimming technologies to ensure device performance. Conventional approaches involve multiple trimming and characterization steps, impacting overall fabrication complexity. Here we demonstrate a highly accurate trimming method combining laser annealing of germanium implanted silicon waveguide and real-time monitoring of device performance. Direct feedback of the trimming process is facilitated by a differential spectroscopic technique based on photomodulation. The resonant wavelength trimming accuracy is better than 0.15 nm for ring resonators with 20-μm radius. We also realize operating point trimming of Mach-Zehnder interferometers with germanium implanted arms.<br/>A phase shift of 1.2π is achieved by annealing a 7-μm implanted segment.