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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Muskens, Otto
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Topics
Publications (6/6 displayed)
- 2022Room temperature phase transition of W-doped VO2 by atomic layer deposition on 200 mm Si wafers and flexible substratescitations
- 2022VO2metasurface smart thermal emitter with high visual transparency for passive radiative cooling regulation in space and terrestrial applicationscitations
- 2018Germanium implanted photonic devices for post-fabrication trimming and programmable circuitscitations
- 2018Real-time monitoring and gradient feedback enable accurate trimming of ion-implanted silicon photonic devicescitations
- 2013Multi-beam PLD of magneto-optic garnets
- 2013Tailoring of YIG film properties via compositional tuning by multi-beam pulsed laser deposition
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article
Real-time monitoring and gradient feedback enable accurate trimming of ion-implanted silicon photonic devices
Abstract
Fabrication errors pose significant challenges on silicon photonics, promoting postfabrication trimming technologies to ensure device performance. Conventional approaches involve multiple trimming and characterization steps, impacting overall fabrication complexity. Here we demonstrate a highly accurate trimming method combining laser annealing of germanium implanted silicon waveguide and real-time monitoring of device performance. Direct feedback of the trimming process is facilitated by a differential spectroscopic technique based on photomodulation. The resonant wavelength trimming accuracy is better than 0.15 nm for ring resonators with 20-μm radius. We also realize operating point trimming of Mach-Zehnder interferometers with germanium implanted arms.<br/>A phase shift of 1.2π is achieved by annealing a 7-μm implanted segment.