| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Schwingenschlogl, Udo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2017Amorphous NiFe-OH/NiFeP Electrocatalyst Fabricated at Low Temperature for Water Oxidation Applicationscitations
- 2017Quantum-corrected transient analysis of plasmonic nanostructurescitations
- 2016k-asymmetric spin splitting at the interface between transition metal ferromagnets and heavy metalscitations
- 2016Plasma-Assisted Synthesis of NiCoP for Efficient Overall Water Splittingcitations
- 2015Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexescitations
- 2015Is NiCo2S4 really a semiconductor?citations
- 2014Lithiation-induced shuffling of atomic stackscitations
- 2014Large thermoelectric power factor in Pr-doped SrTiO3-δ ceramics via grain-boundary-induced mobility enhancementcitations
- 2013Record mobility in transparent p-type tin monoxide films and devices by phase engineeringcitations
- 2013Enhancement of p-type mobility in tin monoxide by native defectscitations
- 2013Major enhancement of the thermoelectric performance in Pr/Nb-doped SrTiO3 under straincitations
- 2012Enhanced carrier density in Nb-doped SrTiO3 thermoelectricscitations
- 2010Variation of equation of state parameters in the Mg2(Si 1-xSnx) alloyscitations
Places of action
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article
Quantum-corrected transient analysis of plasmonic nanostructures
Abstract
A time domain surface integral equation (TD-SIE) solver is developed for quantum-corrected analysis of transient electromagnetic field interactions on plasmonic nanostructures with sub-nanometer gaps. “Quantum correction” introduces an auxiliary tunnel to support the current path that is generated by electrons tunneled between the nanostructures. The permittivity of the auxiliary tunnel and the nanostructures is obtained from density functional theory (DFT) computations. Electromagnetic field interactions on the combined structure (nanostructures plus auxiliary tunnel connecting them) are computed using a TD-SIE solver. Time domain samples of the permittivity and the Green function required by this solver are obtained from their frequency domain samples (generated from DFT computations) using a semi-analytical method. Accuracy and applicability of the resulting quantum-corrected solver scheme are demonstrated via numerical examples.