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Publications (6/6 displayed)
- 2023The state-of-the-art solution-processed single component organic photodetectors achieved by strong quenching of intermolecular emissive state and high quadrupole moment in non-fullerene acceptorscitations
- 2014Optical and electronic properties of bismuth-implanted glassescitations
- 2014n-type chalcogenides by ion implantationcitations
- 2014n-type chalcogenides by ion implantation.citations
- 2014Atomistic origin of the enhanced crystallization speed and n-type conductivity in Bi-doped Ge-Sb-Te phase-change materialscitations
- 2013On the analogy between photoluminescence and carrier-type reversal in Bi- and Pb-doped glassescitations
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article
On the analogy between photoluminescence and carrier-type reversal in Bi- and Pb-doped glasses
Abstract
Reaction order in Bi-doped oxide glasses depends on the opticalbasicity of the glass host. Red and NIR photoluminescence (PL) bandsresult from Bi2+ and Bin clusters, respectively. Very similar centers arepresent in Bi- and Pb-doped oxide and chalcogenide glasses. Bi-implantedand Bi melt-doped chalcogenide glasses display new PL bands, indicatingthat new Bi centers are formed. Bi-related PL bands have been observed inglasses with very similar compositions to those in which carrier-typereversal has been observed, indicating that these phenomena are related tothe same Bi centers, which we suggest are interstitial Bi2+ and Bi clusters.