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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Pirasteh, Parastesh
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2020Porosity calibration in a 4-layer porous silicon structure to fabricate a micro-resonator with well-defined refractive indices and dedicated to biosensing applicationscitations
- 2018Toward hybrid polymer-porous silicon waveguides for Vernier-effect optical biosensors
- 2017Chalcogenides photonic integrated circuits for near- and mid-infrared applications
- 2017Chalcogenides photonic integrated circuits for near- and mid-infrared applications
- 2012Ultra-low reflection porous silicon nanowires for solar cell applicationscitations
- 2012Fluoride and oxyfluoride glasses for optical applicationscitations
- 2007A new approach based on transfer matrix formalism to characterize porous silicon layers by reflectometrycitations
- 2006A new approach based on transfer matrix formalism to characterize porous silicon layers by reflectometrycitations
- 2005Light propagation scattering in porous silicon nanocomposite waveguidescitations
- 2005Light propagation scattering in porous silicon nanocomposite waveguidescitations
- 2004Light propagation and scattering in porous silicon nanocomposite waveguidescitations
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article
Ultra-low reflection porous silicon nanowires for solar cell applications
Abstract
International audience ; High density vertically aligned Porous Silicon NanoWires (PSiNWs) were fabricated on silicon substrate using metal assisted chemical etching process. A linear dependency of nanowire length to the etching time was obtained and the change in the growth rate of PSiNWs by increasing etching durations was shown. A typical 2D bright-field TEM image used for volume reconstruction of the sample shows the pores size varying from 10 to 50 nm. Furthermore, reflectivity measurements show that the 35% reflectivity of the starting silicon wafer drops to 0.1%, recorded for more than 10 µm long PSiNWs. Models based on cone shape of nanowires located in a circular and rectangular bases were used to calculate the reflectance employing the Transfert Matrix Formalism (TMF) of the PSiNWs layer. Using TMF, the Bruggeman model was used to calculate the refractive index of PSiNWs layer. The calculated reflectance using circular cone shape fits better the measured reflectance for PSiNWs. The remarkable decrease in optical reflectivity indicates that PSiNWs is a good antireflective layer and have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection.