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Topics
Publications (11/11 displayed)
- 2018High speed chalcogenide glass electrochemical metallization cells with various active metalscitations
- 2015Fragile-to-Strong Crossover in Supercooled Liquid Ag-In-Sb-Te Studied by Ultrafast Calorimetry
- 2014Optical and electronic properties of bismuth-implanted glassescitations
- 2014n-type chalcogenides by ion implantationcitations
- 2014n-type chalcogenides by ion implantation.citations
- 2013On the analogy between photoluminescence and carrier-type reversal in Bi- and Pb-doped glassescitations
- 2011Determination of the oxidation state and coordination of a vanadium doped chalcogenide glasscitations
- 2009Spectral broadening in femtosecond laser written waveguides in chalcogenide glasscitations
- 2009Ultrabroad emission from a bismuth doped chalcogenide glasscitations
- 2007Concentration dependence of the fluorescence decay profile in transition metal doped chalcogenide glasscitations
- 2005A study of environmental effects on the attenuation of chalcogenide optical fibrecitations
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article
Ultrabroad emission from a bismuth doped chalcogenide glass
Abstract
We report emission from a bismuth doped chalcogenide glasswhich is flattened, has a full width at half maximum (FWHM) of 600 nm,peaks at 1300 nm and covers the entire telecommunications window. Atcryogenic temperatures the FWHM reaches 850 nm. The quantumefficiency and lifetime were as high as 32% and 175 μs, respectively. Wealso report two new bismuth emission bands at 2000 and 2600 nm.Absorption bands at 680, 850, 1020 and 1180 nm were observed. The 1180nm absorption band was previously unobserved. We suggest that the originof the emission in Bi:GLS is Bi 22− dimers.