People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Hughes, Mark A.
University of Salford
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2018High speed chalcogenide glass electrochemical metallization cells with various active metalscitations
- 2014Optical and electronic properties of bismuth-implanted glassescitations
- 2014n-type chalcogenides by ion implantationcitations
- 2014n-type chalcogenides by ion implantation.citations
- 2013On the analogy between photoluminescence and carrier-type reversal in Bi- and Pb-doped glasses ; Analogie mezi fotoluminescencí a změnou typu vodivosti v Bi- a Pb-dotovaných sklechcitations
- 2013On the analogy between photoluminescence and carrier-type reversal in Bi- and Pb-doped glassescitations
- 2013On the analogy between photoluminescence and carrier-type reversal in Bi-and Pb-doped glassescitations
- 2012Direct laser writing of relief diffraction gratings into a bulk chalcogenide glasscitations
- 2011Determination of the oxidation state and coordination of a vanadium doped chalcogenide glasscitations
- 2010The efficiencies of energy transfer from Cr to Nd ions in silicate glassescitations
- 2009Spectral broadening in femtosecond laser written waveguides in chalcogenide glasscitations
- 2009Ultrabroad emission from a bismuth doped chalcogenide glasscitations
- 2007Fabrication and characterization of femtosecond laser written waveguides in chalcogenide glasscitations
- 2007Concentration dependence of the fluorescence decay profile in transition metal doped chalcogenide glasscitations
- 2007Modified chalcogenide glasses for optical device applications
Places of action
Organizations | Location | People |
---|
article
Direct laser writing of relief diffraction gratings into a bulk chalcogenide glass
Abstract
We inscribed relief diffraction gratings with periods of 6, 14, and 24 μm into the surface of Ge15Ga3Sb12S70 bulkglass by the material’s ablation using a femtosecond λ � 800 nm Ti:sapphire pulsed laser. The laser writing wasdone with sample implemented on a computer-controlled stage employing surface-to-beam alignment, laserpower, and raster pattern control. Pulse energies of 1.5, 3.0, and 4.5 μJ were focused on spot diameter of1.5 μm, resulting in channel widths, measured on the surface, of around 4, 5, and 6 μm and depths up to1.7 μm. The first-order diffraction efficiency of the fabricated gratings was up to 10% at λ � 650 nm. We have alsofabricated a “composite” grating combining the three relief diffraction gratings inscribed in the same position, butwith a mutual tilt. The composite grating provides complex multidirectional diffraction of the light in accordancewith geometrical arrangement and grating period of all the gratings inscribed. We propose practical applications offemtosecond pulsed-laser surface patterning, for example, surface-relief diffraction microgratings integrated at theends of multimode mid-IR chalcogenide optical waveguides or on the surfaces of bare core chalcogenide glassoptical fibers used for chemical sensing.