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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Fleming, Lewis
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Publications (7/7 displayed)
- 2024On the piezoelectric properties of zinc oxide thin films synthesised by plasma assisted DC sputter depositioncitations
- 2023Broadband infrared absorber based on a sputter deposited hydrogenated carbon multilayer enhancing MEMS-based CMOS thermopile performancecitations
- 2022High throughput low cost closed field magnetron sputter deposition of durable reflectors based on dielectric overcoated metal for application in non-dispersive infrared gas sensors
- 2022High throughput microwave plasma assisted sputter deposition of linear variable filters and deployment into visible and near infrared spectrometers
- 2020Durable infrared optical coatings based on pulsed DC-sputtering of hydrogenated amorphous carbon (a-C:H)citations
- 2018Optimised performance of non-dispersive infrared gas sensors using multilayer thin film bandpass filterscitations
- 2017Characterisation of Cu2O/CuO thin films produced by plasma-assisted DC sputtering for solar cell applicationcitations
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article
Broadband infrared absorber based on a sputter deposited hydrogenated carbon multilayer enhancing MEMS-based CMOS thermopile performance
Abstract
Based on pulsed DC sputter deposition of hydrogenated carbon, an absorber optical coating with maximized broadband infrared absorptance is reported. Enhanced broadband (2.5–20 µm) infrared absorptance (>90%) with reduced infrared reflection is achieved by combining a low-absorptance antireflective (hydrogenated carbon) overcoat with a broadband-absorptance carbon underlayer (nonhydrogenated). The infrared optical absorptance of sputter deposited carbon with incorporated hydrogen is reduced. As such, hydrogen flow optimization to minimize reflection loss, maximize broadband absorptance, and achieve stress balance is described. Application to complementary metal-oxide-semiconductor (CMOS) produced microelectromechanical systems (MEMS) thermopile device wafers is described. A 220% increase in thermopile output voltage is demonstrated, in agreement with modeled prediction.