Materials Map

Discover the materials research landscape. Find experts, partners, networks.

  • About
  • Privacy Policy
  • Legal Notice
  • Contact

The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

×

Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

To Graph

1.080 Topics available

To Map

977 Locations available

693.932 PEOPLE
693.932 People People

693.932 People

Show results for 693.932 people that are selected by your search filters.

←

Page 1 of 27758

→
←

Page 1 of 0

→
PeopleLocationsStatistics
Naji, M.
  • 2
  • 13
  • 3
  • 2025
Motta, Antonella
  • 8
  • 52
  • 159
  • 2025
Aletan, Dirar
  • 1
  • 1
  • 0
  • 2025
Mohamed, Tarek
  • 1
  • 7
  • 2
  • 2025
Ertürk, Emre
  • 2
  • 3
  • 0
  • 2025
Taccardi, Nicola
  • 9
  • 81
  • 75
  • 2025
Kononenko, Denys
  • 1
  • 8
  • 2
  • 2025
Petrov, R. H.Madrid
  • 46
  • 125
  • 1k
  • 2025
Alshaaer, MazenBrussels
  • 17
  • 31
  • 172
  • 2025
Bih, L.
  • 15
  • 44
  • 145
  • 2025
Casati, R.
  • 31
  • 86
  • 661
  • 2025
Muller, Hermance
  • 1
  • 11
  • 0
  • 2025
Kočí, JanPrague
  • 28
  • 34
  • 209
  • 2025
Šuljagić, Marija
  • 10
  • 33
  • 43
  • 2025
Kalteremidou, Kalliopi-ArtemiBrussels
  • 14
  • 22
  • 158
  • 2025
Azam, Siraj
  • 1
  • 3
  • 2
  • 2025
Ospanova, Alyiya
  • 1
  • 6
  • 0
  • 2025
Blanpain, Bart
  • 568
  • 653
  • 13k
  • 2025
Ali, M. A.
  • 7
  • 75
  • 187
  • 2025
Popa, V.
  • 5
  • 12
  • 45
  • 2025
Rančić, M.
  • 2
  • 13
  • 0
  • 2025
Ollier, Nadège
  • 28
  • 75
  • 239
  • 2025
Azevedo, Nuno Monteiro
  • 4
  • 8
  • 25
  • 2025
Landes, Michael
  • 1
  • 9
  • 2
  • 2025
Rignanese, Gian-Marco
  • 15
  • 98
  • 805
  • 2025

Chi, Mingjun

  • Google
  • 1
  • 5
  • 7

Technical University of Denmark

in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (1/1 displayed)

  • 2020Micro-integrated high-power narrow-linewidth external-cavity tapered diode laser at 808 nm7citations

Places of action

Chart of shared publication
Müller, André
1 / 3 shared
Petersen, Paul Michael
1 / 8 shared
Jensen, Ole Bjarlin
1 / 2 shared
Sumpf, Bernd
1 / 1 shared
Hansen, Anders Kragh
1 / 2 shared
Chart of publication period
2020

Co-Authors (by relevance)

  • Müller, André
  • Petersen, Paul Michael
  • Jensen, Ole Bjarlin
  • Sumpf, Bernd
  • Hansen, Anders Kragh
OrganizationsLocationPeople

article

Micro-integrated high-power narrow-linewidth external-cavity tapered diode laser at 808 nm

  • Chi, Mingjun
  • Müller, André
  • Petersen, Paul Michael
  • Jensen, Ole Bjarlin
  • Sumpf, Bernd
  • Hansen, Anders Kragh
Abstract

A novel compact micro-integrated high-power narrow-linewidth external-cavity diode laser around 808 nm is demonstrated. The laser system contains a tapered amplifier consisting of a ridge-waveguide section and a tapered section with separated electrical contacts. Thus, the injection currents to both sections can be controlled independently. An external volume Bragg grating is utilized for spectral narrowing and stabilization.The diode laser system is integrated on a 5 mm x 13 mm aluminum nitride micro-optical bench on a conduction cooled package mount with a footprint of 25 mm x 25 mm. The diode laser system is characterized by measuring the output power and spectrum with the injection currents to the ridge-waveguide section (IRW) and tapered amplifier section (ITA) changed in steps of 25 and 50 mA, respectively. At IRW = 200 mA and ITA = 6.0 A, 3.5 watts of output power is obtained with an emission spectral linewidth with an upper bound of 6 pm, and a beam propagation factor in the slow axis, M2, of 2.6 (1/e2). The characterization of the temperature stabilization of the laser system shows an increase of the wavelength at a rate of 6.5 pm/K, typical for the applied volume Bragg grating. © 2019 Optical Society of America

Topics
  • impedance spectroscopy
  • aluminium
  • nitride