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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kisiel, Ryszard
Warsaw University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2022Influence of Ag particle shape on mechanical and thermal properties of TIM jointscitations
- 2022Pressureless Direct Bonding of Au Metallized Substrate with Si Chips by Micro-Ag Particlescitations
- 2020Development of Assembly Techniques for Connection of AlGaN/GaN/Si Chips to DBC substratecitations
- 2019Development of SLID Bonding Technology for GaN Assembly Based on Ag Microflakescitations
- 2019Electrical properties of vertical GaN Schottky diodes on Ammono-GaN substratecitations
- 2018Solid-Liquid Interdiffusion Bonding Based on Au-Sn Intermetallic for High Temperature Applicationscitations
- 2017Combination of Solid-Liquid Interdiffusion and Sintering Bonding for GaN Devices Assemblycitations
- 2017Fluxless Pressure Ag Sintering in Creation of Au-Ag Connection Systems
- 2016Challenges in packaging of IR detectors – technology of elastic electrical connectionscitations
- 2016Die attach by diffusion Sn-Ag-Sn soldering in high temperature electronics applicationscitations
- 2016Application of Direct Bonded Copper Substrates for Prototyping of Power Electronic Modulescitations
- 2015Challenges in packaging of IR detectors – technology of elastic electrical connections
- 2014Materials and Technological Aspects of High-Temperature SiC Package Reliability
- 2014Thermal characteristics of SiC diode assembly to ceramic substratecitations
- 2011Mechanical and Thermal Properties of SiC – Ceramics Substrate Interface
- 2011Mechanisms of carriers transport in Ni/n-SiC, Ti/n-SiC ohmic contactscitations
- 2010Overview of Materials and Bonding Techniques for Inner Connections in SiC High Power and High Temperature Applicationscitations
- 2009Stability of gold bonding and Ti/Au ohmic contact metallization to n-SiC in high power devicescitations
- 2004(Sn-Ag)eut Cu Soldering Materials, Part I: Wettability Studiescitations
- 2004(Sn-Ag)eut Cu Soldering Materials, Part II
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article
(Sn-Ag)eut Cu Soldering Materials, Part I: Wettability Studies
Abstract
The maximum bubble pressure, dilatometric, and meniscographic methods were used in investigations of the surface tension, density, wetting time, wetting force, contact angles, and interfacial tension of liquid (Sn-Ag)eut and two (Sn-Ag)eut+Cu alloys (Cu at.%=0.46 and 0.74). The density and surface tension measurements were conducted in the temperature range from 230 to 950 °C, and the meniscographic investigations were carried out at 252 °C. The resultant values of surface tension were compared with those calculated from Butler’s model based on optimized thermodynamic parameters and our data from earlier investigations. In an earlier study, experimental data for all investigated compositions (Cu at. %=1.08 to 6.5) exhibit an increase in the surface tension with interesting temperature, while both ternary alloys of this study show a slight lowering tendency in comparison to (Sn-Ag)eut. A more evident decreasing tendency of surface tension and interfacial tension was noted in meniscographic measurements, noting that data of interfacial tension are always lower than surface tension due to the role of the flux. Eight different fluxes were tested to select the lowest interfacial tension for the (Sn-Ag)eut. ROLI (3% solids), which is the alcoholic solution of organic compounds and rosin activated by halogens, was recommended. In (Sn-Ag)eut+Cu Soldering Materials, Part II: Electrical and Mechanical Studies, for the same (Sn-Ag)eut and (Sn-Ag)eut+Cu alloys (Cu at. %=0.46 and 0.74), the electrical resistance and strength measurements will be presented in parallel with printed-circuit boards in wave soldering at 260 °C.