| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Krasheninnikov, Arkady
Helmholtz-Zentrum Dresden-Rossendorf
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2023Roadmap for focused ion beam technologiescitations
- 2023Phase transformations in single-layer MoTe<sub>2</sub> stimulated by electron irradiation and annealingcitations
- 2021Water dissociation and association on mirror twin boundaries in two-dimensional MoSe2: insights from density functional theory calculationscitations
- 2020Simulating Raman spectra by combining first-principles and empirical potential approaches with application to defective MoS2citations
- 2016Mechanical properties and current-carrying capacity of Al reinforced with graphene/BN nanoribbons: a computational studycitations
- 2016Nanostructured BN-Mg composites: features of interface bonding and mechanical propertiescitations
- 2015Line and rotational defects in boron-nitrene: Structure, energetics, and dependence on mechanical strain from first-principles calculationscitations
- 2008Ion irradiation of carbon nanotubes encapsulating cobalt crystalscitations
- 2006Swift chemical sputtering of covalently bonded materialscitations
- 2006Energetics, structure, and long-range interaction of vacancy-type defects in carbon nanotubescitations
Places of action
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article
Swift chemical sputtering of covalently bonded materials
Abstract
Numerous experiments have shown that low-energy H ions and neutrals can erode amorphous carbon at ion energies of 1-10 eV, where physical sputtering is impossible, but at erosion rates which are clearly higher than those caused by thermal ions. In this paper, we will first review our computer simulation work providing an atom-level mechanism for how this erosion occurs, and then present some new results for H and He bombardment of tungsten carbide and amorphous hydrogenated silicon (a-Si:H), which indicate the mechanism can be of importance in a wide range of covalently bonded materials. We also discuss how the presented mechanism relates to previously described abstraction and etching mechanisms.