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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Szmidt, Jan
Warsaw University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024The Preparation and Properties of a Hydrogen-Sensing Field-Effect Transistor with a Gate of Nanocomposite C-Pd Film
- 2020Hydrogen sensor based on field effect transistor with C-Pd layercitations
- 2020Field effect transistor with thin AlOxNy film as gate dielectric
- 2019Technology and characterization of ISFET structures with graphene membranecitations
- 2019Influence of annealing on electronic properties of thin AlN films deposited by magnetron sputtering method on silicon substratescitations
- 2018Capillary Sensors with UV-Forced Degradation and Fluorescence Reading of Chemical Stability and Polycyclic Aromatic Hydrocarbons Presence in Diesel Fuels
- 2018Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2/SiO2/4H‐SiC Metal‐Oxide Semiconductor Structurescitations
- 2015Depth Profile Analysis of Phosphorus Implanted SiC Structurescitations
- 2013Application of scanning microscopy to study correlation between thermal properties and morphology of BaTiO3 thin filmscitations
- 2013Plasma etching of aluminum nitride thin films prepared by magnetron sputtering method
- 2013Characterization of thin Gd2O3 magnetron sputtered layers citations
- 2011Electronic properties of BaTiO<sub>3</sub>/4H-SiC interfacecitations
- 2009Electric Characterization and Selective Etching of Aluminum Oxidecitations
- 2007Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF<inf>4</inf> mixture gas mixing ratiocitations
- 2006Optical fiber switch for sensor networks: design principles
- 2001Electronic properties of unipolar heterostructures amorphous carbon diamond - amorphous carbon
Places of action
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article
Depth Profile Analysis of Phosphorus Implanted SiC Structures
Abstract
Secondary ion mass spectrometry depth profile analyses were performed on two sets of 4H-SiC(0001) substrate samples implanted with phosphorus. Both sets were processed under the same conditions. We implanted the samples with 100 keV (1011-1014 cm-2) phosphorus ions through the thin chemical vapor deposition deposited silicon dioxide stopping mask in order to obtain an ultra-shallow implantation profile. After phosphorus implantation, secondary ion mass spectrometry depth profile analysis was performed on the first set of samples and the second set was subjected to thermal oxidation procedure at 1200°C in order to create a dielectric layer. The aim of the oxidation process was formation of the silicon dioxide layer enriched with phosphorus: the element, which is considered to be suitable for trap density reduction. Ion implantation parameters as well as oxidation and chemical etching procedures were examined for the proper incorporation of phosphorus into the subsurface structure of the silicon oxide. Secondary ion mass spectrometry depth profile analysis was performed with Physical Electronics 06-350E sputter ion gun and QMA-410 Balzers quadrupole mass analyser. The analytical parameters such as: 1.7 keV Ar+ ion beam digitally scanned over 3×3 mm2 area and ion erosion rate of 1.4 nm/min and sampling rate of 0.3 nm, were suitable for samples oxidized after ion implantation.