| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Pakštas, Vidas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024The Dependence of NiMo/Cu Catalyst Composition on Its Catalytic Activity in Sodium Borohydride Hydrolysis Reactionscitations
- 2022Seed Layer Optimisation for Ultra-Thin Sb2Se3 Solar Cells on TiO2 by Vapour Transport Depositioncitations
- 2022Synthesis and physical characteristics of narrow bandgap chalcogenide SnZrSe3citations
- 2022Comparison of the Activity of 3D Binary or Ternary Cobalt Coatings for Hydrogen and Oxygen Evolution Reactionscitations
- 2020Suppression of Electric Field-Induced Segregation in Sky-Blue Perovskite Light-Emitting Electrochemical Cellscitations
- 2019Electronic structure of CsPbBr<sub>3−x</sub>Cl<sub>x</sub> perovskites: synthesis, experimental characterization, and DFT simulationscitations
- 2019A few-minute synthesis of CsPbBr3 nanolasers with a high quality factor by spraying at ambient conditionscitations
- 2019Investigation of the properties of Cr coatings deposited in an improved Cr(III) electrolytecitations
- 2019A few-minute synthesis of CsPbBr 3 nanolasers with a high quality factor by spraying at ambient conditionscitations
- 2016Platinum-Niobium(V) Oxide/Carbon Nanocomposites Prepared By Microwave Synthesis For Ethanol Oxidation
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article
Synthesis and physical characteristics of narrow bandgap chalcogenide SnZrSe3
Abstract
<ns3:p><ns3:bold>Background:</ns3:bold> The development of organic/inorganic metal halide perovskites has seen unprecedent growth since their first recognition for applications in optoelectronic devices. However, their thermodynamic stability and toxicity remains a challenge considering wide-scale deployment in the future. This spurred an interest in search of perovskite-inspired materials which are expected to retain the advantageous material characteristics of halide perovskites, but with high thermodynamic stability and composed of earth-abundant and low toxicity elements. ABX<ns3:sub>3</ns3:sub> chalcogenides (A, B=metals, X=Se, S) have been identified as potential class of materials meeting the aforementioned criteria.</ns3:p><ns3:p> <ns3:bold>Methods:</ns3:bold> In this work, we focus on studying tin zirconium selenide (SnZrSe<ns3:sub>3</ns3:sub>) relevant physical properties with an aim to evaluate its prospects for application in optoelectronics. SnZrSe<ns3:sub>3</ns3:sub> powder and monocrystals were synthesized via solid state reaction in 600 – 750 °C temperature range. Crystalline structure was determined using single crystal and powder X-ray diffraction methods. The bandgap was estimated from diffused reflectance measurements on powder samples and electrical properties of crystals were analysed from temperature dependent <ns3:italic>I-V</ns3:italic> measurements.<ns3:bold> </ns3:bold></ns3:p><ns3:p> <ns3:bold>Results: </ns3:bold>We found that SnZrSe<ns3:sub>3</ns3:sub> crystals have a needle-like structure (space group – <ns3:italic>Pnma</ns3:italic>) with following unit cell parameters: a=9.5862(4) Å, b=3.84427(10) Å, c=14.3959(5) Å. The origin of the low symmetry crystalline structure was associated with stereochemical active electron lone pair of Sn cation. Estimated bandgap was around 1.15 eV which was higher than measured previously and predicted theoretically. Additionally, it was found that resistivity and conductivity type depended on the compound chemical composition.</ns3:p><ns3:p> <ns3:bold>Conclusions:</ns3:bold><ns3:bold> </ns3:bold>Absorption edge in the infrared region and bipolar dopability makes SnZrSe<ns3:sub>3</ns3:sub> an interesting material candidate for application in earth-abundant and non-toxic single/multi-junction solar cells or other infrared based optoelectronic devices.</ns3:p>