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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Sangiao, Soraya
Universidad de Zaragoza
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Polymer assisted deposition of YIG thin films with thickness control for spintronics applicationscitations
- 2023Ion-induced lateral damage in the focused ion beam patterning of topological insulator Bi2Se3 thin filmscitations
- 2022Low-resistivity, high-resolution W-C electrical contacts fabricated by direct-write focused electron beam induced depositioncitations
- 2022Low-resistivity Pd nanopatterns created by a direct electron beam irradiation process free of post-treatment stepscitations
- 2022Low-resistivity Pd nanopatterns created by a direct electron beam irradiation process free of post-treatment stepscitations
- 2022High-throughput direct writing of metallic micro- and nano-structures by focused Ga+beam irradiation of palladium acetate filmscitations
- 2022Superconducting materials and devices grown by focused ion and electron beam induced depositioncitations
- 2021Highly-efficient growth of cobalt nanostructures using focused ion beam induced deposition under cryogenic conditions: application to electrical contacts on graphene, magnetism and hard maskingcitations
- 2021Omnipresence of weak antilocalization (WAL) in Bi2Se3 thin films: A review on its origincitations
- 2021Omnipresence of weak antilocalization (WAL) in Bi 2 Se 3 thin films:a review on its origincitations
- 2021Omnipresence of weak antilocalization (WAL) in Bi2Se3 thin films : a review on its origincitations
- 2021Highly-efficient growth of cobalt nanostructures using focused ion beam induced deposition under cryogenic conditions : application to electrical contacts on graphene, magnetism and hard maskingcitations
- 2017Chemical solution synthesis and ferromagnetic resonance of epitaxial thin films of yttrium iron garnetcitations
- 2017All-carbon electrode molecular electronic devices based on Langmuir–Blodgett monolayerscitations
Places of action
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article
Low-resistivity, high-resolution W-C electrical contacts fabricated by direct-write focused electron beam induced deposition
Abstract
<ns4:p><ns4:bold>Background</ns4:bold>: The use of a focused ion beam to decompose a precursor gas and produce a metallic deposit is a widespread nanolithographic technique named focused ion beam induced deposition (FIBID). However, such an approach is unsuitable if the sample under study is sensitive to the somewhat aggressive exposure to the ion beam, which induces the effects of surface amorphization, local milling, and ion implantation, among others. An alternative strategy is that of focused electron beam induced deposition (FEBID), which makes use of a focused electron beam</ns4:p><ns4:p> instead, and in general yields deposits with much lower metallic content than their FIBID counterparts.</ns4:p><ns4:p> <ns4:bold>Methods</ns4:bold>: In this work, we optimize the deposition of tungsten-carbon (W-C) nanowires by FEBID to be used as electrical contacts by assessing the impact of the deposition parameters during growth, evaluating their chemical composition, and investigating their electrical response.</ns4:p><ns4:p> <ns4:bold>Results</ns4:bold>: Under the optimized irradiation conditions, the samples exhibit a metallic content high enough for them to be utilized for this purpose, showing a room-temperature resistivity of 550 μΩ cm and maintaining their conducting properties down to 2 K. The lateral resolution of such FEBID W-C metallic nanowires is 45 nm.</ns4:p><ns4:p> <ns4:bold>Conclusions</ns4:bold>: The presented optimized procedure may prove a valuable tool for the fabrication of contacts on samples where the FIBID approach is not advised</ns4:p>