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Pilli, S. R.
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article
Impact of Ar:O<sub>2</sub> gas flow ratios on microstructure and optical characteristics of CeO<sub>2</sub>-doped ZnO thin films by magnetron sputtering
Abstract
<jats:title>Abstract</jats:title><jats:p>In this study, a radio frequency magnetron sputtering technique was applied to deposit eminently oriented ZnO thin films on stainless steel (SS316L). The effect of different ratios (Ar:O<jats:sub>2</jats:sub>) of gas flow ((20:0), (15:5), (10:10), (5:15), (0:20)) on optical and structural properties of CeO<jats:sub>2</jats:sub>-doped ZnO thin films has been examined. The increase in grain size of thin films was observed with a partial increase in the Ar:O<jats:sub>2</jats:sub> sputtering gas at substrate temperature of 673 K. The average surface roughness of the thin films has increased with sputtering gas. The photoluminescence peak exhibited a broad green-yellow band spiked at 467 nm for all the samples of CeO<jats:sub>2</jats:sub>-doped ZnO thin films and a wide band of visible light focused in the 500–600 nm range. Intensity reduction of deep level emission peaks of ZnO films was observed. The refractive index of undoped and CeO<jats:sub>2</jats:sub>-doped ZnO thin films with various sputtering gas ratios (Ar:O<jats:sub>2</jats:sub>) were also investigated. The optimized argon gas flow rate findings allow us to choose the deposition conditions for CeO<jats:sub>2</jats:sub>-doped ZnO thin films for solar thermal applications.</jats:p>