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Patterson, R.
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article
Ultra-thin silicon nitride barrier implementation for Si nano-crystals embedded in amorphous silicon carbide matrix with hybrid superlattice structure
Abstract
<p>A hybrid superlattice structure consisting of 30 periods of alternating amorphous Si<sub>0.7</sub>C<sub>0.3</sub> (5 nm) layers and ultra-thin Si<sub>3</sub>N<sub>4</sub>barrier layers (0.2–2.0 nm) has been synthesised by magnetronsputtering, with subsequent annealing by a rapid thermal annealing (RTA)process. Si nano-crystals behave well confined within individual layerswhen the Si<sub>3</sub>N<sub>4</sub> layer thickness is over 0.8 nm, due to the Si very low diffusion coefficient in Si<sub>3</sub>N<sub>4</sub>matrix. Hopping is regarded as the dominant carrier transportationmechanism in the film based on fitting the temperature-dependent I-Vmeasurements results. In conclusion an optimum Si<sub>3</sub>N<sub>4</sub> barrier layer thickness of approximately 0.8 nm may be appropriate as a candidate material for photovoltaic application.</p>