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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dubon, Oscar D.
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Publications (5/5 displayed)
- 2020Temperature-dependent growth of hexagonal and monoclinic gallium sulfide films by pulsed-laser depositioncitations
- 2019Amorphous gallium oxide sulfidecitations
- 2010Heat flow model for pulsed laser melting and rapid solidification of ion implanted GaAscitations
- 2010Ga1-xMnxP synthesized by ion implantation and pulsed-laser meltingcitations
- 2007Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductorscitations
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booksection
Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting
Abstract
The synthesis of single-crystalline epitaxial thin films of the carrier-mediated ferromagnetic phase of Ga<sub>1-x</sub>Mn<sub>x</sub>P and Ga<sub>1-x</sub>Mn<sub>x</sub>P-based quaternary alloys using ion implantation and pulsed-laser melting (II-PLM) has allowed for the exploration of the effect of anion substitution on ferromagnetism in Ga<sub>1-x</sub>Mn<sub>x</sub>-pnictide systems. Despite displaying significantly greater hole localization than the canonical Ga<sub>1-x</sub>Mn<sub>x</sub>As system many of the properties, including the dependence of the Curie temperature on x and hole concentration, X-ray absorption spectroscopy and magnetic circular dichroism lineshapes, and manipulation of the magnetic anisotropy by carrier concentration and epitaxial strain, are substantially similar in the two materials. Furthermore, the combination of far infrared photoconductivity and THz spectroscopy indicates that the carriers responsible for ferromagnetic exchange are localized within an impurity band that remains unmergedwith the GaP valence band for at least x ≤ 0.042. These remarkable findings suggest that ferromagnetism in III<sub>1-x</sub>Mn<sub>x</sub>V materials exists on a continuum in terms of carrier localization and that localized carriers primarily of cation d character are capable of effectively mediating ferromagnetic exchange. © 2009 by Pan Stanford Publishing Pte Ltd. All rights reserved.