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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Lamb, Daniel
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2014Investigation into ultrathin CdTe solar cellVocusing SCAPS modellingcitations
- 2014Cadmium Telluride Solar Cells on Ultrathin Glass for Space Applicationscitations
- 2009Impedance spectroscopy of thin-film CdTe/CdS solar cells under varied illuminationcitations
- 2008The application of a statistical methodology to investigate deposition parameters in CdTe/CdS solar cells grown by MOCVDcitations
Places of action
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article
Investigation into ultrathin CdTe solar cellVocusing SCAPS modelling
Abstract
Ultrathin CdTe photovoltaic solar cells were produced by metal organic chemical vapour deposition in a single horizontally configured growth chamber. Solar cell activation was investigated by varying the duration of the CdCl2 layer deposition and 420°C thermal anneal to promote Cl diffusion into the CdTe. Thicker CdCl2 layers used in activation treatment resulted in a greater degree of sulphur interdiffusion, up to 2 at.-%, into the CdTe layer. The thicker CdCl2 activation layer was necessary to lower the reverse saturation current density for obtaining optimum experimental photovoltaic (PV) device performances. Modelling of the PV performances with equivalent solar cell structure for optimised devices using solar cell capacitance simulation software resulted in an overestimated open circuit voltage (Voc). The simulations showed that reduced acceptor states at the CdTe interface with the intermixed region resulted in the largest decrease in Voc when considering large back surface recombination velocities.