• Parisini, Antonella
• Bersani, Danilo
• Rampino, Stefano
• Fornari, Roberto
• Mazzolini, Piero
• Pavesi, Maura
• Sacchi, Anna
• Spaggiari, Giulia
• Mezzadri, Francesco
• Pattini, Francesco
• Baraldi, Andrea
• Bosi, Matteo
• Seravalli, Luca

Abstract

<jats:p> Raman spectroscopy, a versatile and nondestructive technique, was employed to develop a methodology for gallium oxide (Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) phase detection and identification. This methodology combines experimental results with a comprehensive literature survey. The established Raman approach offers a powerful tool for nondestructively assessing phase purity and detecting secondary phases in Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin films. X-ray diffraction was used for comparison, highlighting the complementary information that these techniques may provide for Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> characterization. Few case studies are included to demonstrate the usefulness of the proposed spectroscopic approach, namely the impact of deposition conditions such as metal–organic vapor-phase epitaxy and pulsed electron deposition (PED), and extrinsic elements provided during growth (Sn in the case of PED) on Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> polymorphism. In conclusion, it is shown that Raman spectroscopy offers a quick, reliable, and nondestructive high-resolution approach for Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin film characterization, especially concerning phase detection and crystalline quality. </jats:p>

Topics

• Deposition
• impedance spectroscopy
• phase
• x-ray diffraction
• thin film
• Raman spectroscopy
• Gallium