| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Fornari, Roberto
University of Parma
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga<sub>2</sub>O<sub>3</sub>) Thin Filmscitations
- 2024Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments
- 2024Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursorscitations
- 2021Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains
- 2020Expitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistorscitations
- 2017The real structure of ε-Ga2O3 and its relation to κ-phasecitations
- 2012Method and apparatus for growing indium oxide (In2O3) single crystals and indium oxide (In2O3) single crystal
- 2008Properties of rare-earth scandate single crystals (Re = Nd-Dy)citations
- 2008The growth of ZnO crystals from the meltcitations
- 2007Theoretical model for calculation of thermal diffusion factors in diluted binary meltscitations
- 2006Epitaxial growth of ferroelectric oxide filmslcitations
- 2006Polarity- and orientation-related defect distribution in 4H-SiC single crystalscitations
Places of action
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article
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga<sub>2</sub>O<sub>3</sub>) Thin Films
Abstract
<jats:p> Raman spectroscopy, a versatile and nondestructive technique, was employed to develop a methodology for gallium oxide (Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) phase detection and identification. This methodology combines experimental results with a comprehensive literature survey. The established Raman approach offers a powerful tool for nondestructively assessing phase purity and detecting secondary phases in Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin films. X-ray diffraction was used for comparison, highlighting the complementary information that these techniques may provide for Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> characterization. Few case studies are included to demonstrate the usefulness of the proposed spectroscopic approach, namely the impact of deposition conditions such as metal–organic vapor-phase epitaxy and pulsed electron deposition (PED), and extrinsic elements provided during growth (Sn in the case of PED) on Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> polymorphism. In conclusion, it is shown that Raman spectroscopy offers a quick, reliable, and nondestructive high-resolution approach for Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin film characterization, especially concerning phase detection and crystalline quality. </jats:p>