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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Proenca, Mp
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2022Fabrication of FePt nanowires through pulsed electrodeposition into nanoporous alumina templatescitations
- 2017Tailoring Bi-Te based nanomaterials by electrodeposition: Morphology and crystalline structurecitations
- 2016Electrodeposition of ZnO thin films on conducting flexible substratescitations
- 2016Tuning the Stoichiometry of Ag2S Thin Films for Resistive Switching Applicationscitations
- 2015Study of magnetoelastic and magnetocrystalline anisotropies in CoxN1-x nanowire arrayscitations
- 2012pH sensitive silica nanotubes as rationally designed vehicles for NSAIDs deliverycitations
- 2011Tunning pore filling of anodic alumina templates by accurate control of the bottom barrier layer thicknesscitations
- 2010Cobalt ferrite thin films deposited by electrophoresis on p-doped Si substratescitations
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article
Tuning the Stoichiometry of Ag2S Thin Films for Resistive Switching Applications
Abstract
In this work silver-rich and sulfur-rich silver sulfide (Ag2S) thin films were fabricated using a diversified set of experimental methods, namely ion beam deposition and atmosphere-and solution-based sulfurizations. The composition of the Ag2S thin films was studied using X-ray diffraction, Raman spectroscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. We found that it strongly depends on the fabrication conditions, such as sulfurization time and temperature. These conditions, in turn, affect the electrical characteristics of the thin films, namely the resistivity and resistive switching. We were able to control the Ag2S stoichiometry and infer its dependence on the fabrication parameters for all the followed methods.