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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Puurunen, Riikka
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2016Thermal conductivity of amorphous Al 2 O 3 / TiO 2 nanolaminates deposited by atomic layer depositioncitations
- 2016Highly conformal TiN by atomic layer deposition:growth and characterization
- 2016Residual stress in thin films made by atomic layer deposition
- 2013Membranes and tubules by nanoimprinting and atomic layer deposition
- 2011Controlling the crystallinity and roughness of atomic layer deposited titanium dioxide filmscitations
- 2010Low-Temperature Processes for MEMS Device Fabricationcitations
- 2010Thin film absorbers for visible, near-infrared, and short-wavelength infrared spectracitations
- 2007Atomic layer deposition of iridium(III) acetylacetonate on alumina, silica–alumina, and silica supportscitations
Places of action
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article
Controlling the crystallinity and roughness of atomic layer deposited titanium dioxide films
Abstract
The surface roughness of thin films is an important parameter related to the sticking behaviour of surfaces in the manufacturing of microelectomechanical systems (MEMS). In this work, TiO2 films made by atomic layer deposition (ALD) with the TiCl4–H2O process were characterized for their growth, roughness and crystallinity as function of deposition temperature (110–300 °C), film thickness (up to ∼100 nm) and substrate (thermal SiO2, RCA-cleaned Si, Al2O3). TiO2 films got rougher with increasing film thickness and to some extent with increasing deposition temperature. The substrate drastically influenced the crystallization behaviour of the film: for films of about 20 nm thickness, on thermal SiO2 and RCA-cleaned Si, anatase TiO2 crystal diameter was about 40 nm, while on Al2O3 surface the diameter was about a micrometer. The roughness could be controlled from 0.2 nm up to several nanometers, which makes the TiO2 films candidates for adhesion engineering in MEMS.