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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sadeghi, Hatef
University of Warwick
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023Determination of electric and thermoelectric properties of molecular junctions by AFM in peak force tapping modecitations
- 2022Low Thermal Conductivity in Franckeite Heterostructurescitations
- 2022Thermoelectric properties of organic thin films enhanced by π-π stackingcitations
- 2020Radical enhancement of molecular thermoelectric efficiencycitations
- 2019Discriminating Seebeck Sensing of Moleculescitations
- 2019Quantum and Phonon Interference Enhanced Molecular-Scale Thermoelectricitycitations
- 2019Unusual length dependence of the conductance in cumulene molecular wirescitations
- 2019Magic Number Theory of Superconducting Proximity Effects and Wigner Delay Times in Graphene-Like Moleculescitations
- 2018Stable-radicals increase the conductance and Seebeck coefficient of graphene nanoconstrictionscitations
- 2018Toward High Thermoelectric Performance of Thiophene and Ethylenedioxythiophene (EDOT) Molecular Wirescitations
- 2018Connectivity-driven bi-thermoelectricity in heteroatom-substituted molecular junctionscitations
- 2017Tuning the Seebeck coefficient of naphthalenediimide by electrochemical gating and dopingcitations
- 2017High-performance thermoelectricity in edge-over-edge zinc-porphyrin molecular wirescitations
- 2017Thermoelectricity in vertical graphene-C60-graphene architecturescitations
- 2016Theory of electron and phonon transport in nano and molecular quantum devices
- 2016Cross-plane enhanced thermoelectricity and phonon suppression in graphene/MoS2 van der Waals heterostructurescitations
- 2013Classic and quantum capacitances in bernal bilayer and trilayer graphene field effect transistorcitations
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article
Classic and quantum capacitances in bernal bilayer and trilayer graphene field effect transistor
Abstract
peer reviewed ; Our focus in this study is on characterizing the capacitance voltage (C-V) behavior of Bernal stacking bilayer graphene (BG) and trilayer graphene (TG) as the channel of FET devices. The analytical models of quantum capacitance (QC) of BG and TG are presented. Although QC is smaller than the classic capacitance in conventional devices, its contribution to the total metal oxide semiconductor capacitor in graphene-based FET devices becomes significant in the nanoscale. Our calculation shows that QC increases with gate voltage in both BG and TG and decreases with temperature with some fluctuations. However, in bilayer graphene the fluctuation is higher due to its tunable band structure with external electric fields. In similar temperature and size, QC in metal oxide BG is higher than metal oxide TG configuration. Moreover, in both BG and TG, total capacitance is more affected by classic capacitance as the distance between gate electrode and channel increases. However, QC is more dominant when the channel becomes thinner into the nanoscale, and therefore we mostly deal with quantum capacitance in top gate in contrast with bottom gate that the classic capacitance is dominant. © 2013 Hatef Sadeghi et al.