• Mcnab, Shona

Abstract

<jats:p>Dielectric thin films are a fundamental part of solid-state devices providing the means for advanced structures and enhanced operation. Charged dielectrics are a particular kind in which embedded charge is used to create a static electric field which can add functionality and improve the performance of adjacent electronic materials. To date, the charge concentration has been limited to intrinsic defects present after dielectric synthesis, unstable corona charging, or complex implantation processes. While such charging mechanisms have been exploited in silicon surface passivation and energy harvesters, an alternative is presented here. Solid-state cations are migrated into SiO<jats:sub>2</jats:sub> thin films using a gateless and implantation-free ion injecting method, which can provide greater long-term durability and enable fine charge tailoring. We demonstrate the migration kinetics and the stability of potassium, rubidium, and caesium cations inside of SiO<jats:sub>2</jats:sub> thin films, showing that the ion concentration within the film can be tuned, leading to charge densities between 0.1–10 × 10<jats:sup>12</jats:sup> q cm<jats:sup>−2</jats:sup>. A comprehensive model of ion injection and transport is presented along a detailed investigation of the kinetics of alkali cations. Integrating ionic charge into dielectrics to produce controlled electric fields can enable new architectures where field effect is exploited for improved electron devices.</jats:p>

Topics

• impedance spectroscopy
• surface
• thin film
• Potassium
• Silicon
• defect
• durability
• Rubidium
• Caesium