| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ren, Fan
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Publications (5/5 displayed)
- 2023Heavy ion irradiation induced failure of gallium nitride high electron mobility transistors: effects of in-situ biasingcitations
- 2022Band Alignment of Al<sub>2</sub>O<sub>3</sub> on α-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub>citations
- 2020In Situ Transmission Electron Microscopy Observations of Forward Bias Degradation of Vertical Geometry β-Ga<sub>2</sub>O<sub>3</sub> Rectifierscitations
- 2016Synthesis of graphene and graphene nanostructures by ion implantation and pulsed laser annealingcitations
- 2012Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealingcitations
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article
Band Alignment of Al<sub>2</sub>O<sub>3</sub> on α-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub>
Abstract
<jats:p>X Ray Photoelectron Spectroscopy was used to measure valence band offsets for Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> deposited by Atomic Layer Deposition on <jats:italic>α</jats:italic>-(Al<jats:sub>x</jats:sub>Ga<jats:sub>1-x</jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> alloys over a wide range of Al contents, x, from 0.26–0.74, corresponding to a bandgap range from 5.8–7 eV. These alloys were grown by Pulsed Laser Deposition. The band alignments were type I (nested) at x <0.5, with valence band offsets 0.13 eV for x = 0.26 and x = 0.46. At higher Al contents, the band alignment was a staggered alignment, with valence band offsets of − 0.07 eV for x = 0.58 and −0.17 for x = 0.74, ie. negative valence band offsets in both cases. The conduction band offsets are also small at these high Al contents, being only 0.07 eV at x = 0.74. The wide bandgap of the <jats:italic>α</jats:italic>-(Al<jats:sub>x</jats:sub>Ga<jats:sub>1-x</jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> alloys makes it difficult to find dielectrics with nested band alignments over the entire composition range.</jats:p>