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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ren, Fan
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Publications (5/5 displayed)
- 2023Heavy ion irradiation induced failure of gallium nitride high electron mobility transistors: effects of in-situ biasingcitations
- 2022Band Alignment of Al<sub>2</sub>O<sub>3</sub> on α-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub>citations
- 2020In Situ Transmission Electron Microscopy Observations of Forward Bias Degradation of Vertical Geometry β-Ga<sub>2</sub>O<sub>3</sub> Rectifierscitations
- 2016Synthesis of graphene and graphene nanostructures by ion implantation and pulsed laser annealingcitations
- 2012Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealingcitations
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article
In Situ Transmission Electron Microscopy Observations of Forward Bias Degradation of Vertical Geometry β-Ga<sub>2</sub>O<sub>3</sub> Rectifiers
Abstract
<jats:p>The microstructural changes and degradation under forward bias of vertical <jats:italic>β</jats:italic>-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> rectifiers were observed by in-situ transmission electron microscopy. The devices show both a voltage dependence for the onset of visible degradation as well as a time dependence at this threshold voltage, suggesting a defect percolation process is occurring. The degraded rectifiers show a large decrease in forward current and different types of crystal defects are present, including stacking fault tetrahedra, microcracks, Ga-rich droplets and Au inclusions from the top electrode. Continued forward bias stressing is known to lead to macro-cracks oriented along the [010] crystal orientation and eventual delamination of the epitaxial drift layer, but this study is the first to provide insight into the appearance of the smaller defects that precede the large scale mechanical failure of the rectifiers. The initial stages of bias stressing also produce an increase in deep trap states near E<jats:sub>C</jats:sub>−1.2 eV.</jats:p>