| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Levason, William
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (25/25 displayed)
- 2022Tungsten(VI) selenide tetrachloride, WSeCl 4 - synthesis, properties, coordination complexes and application of [WSeCl 4 (SenBu 2 )] for CVD growth of WSe 2 thin filmscitations
- 2021Mono- and di-phosphine oxide complexes of aluminium, gallium and indium with weakly coordinating triflate anions – Synthesis, structures and propertiescitations
- 2021Tungsten disulfide thin films via electrodeposition from a single source precursorcitations
- 2020Selective chemical vapor deposition approach for Sb2Te3 thin film micro-thermoelectric generatorscitations
- 2020Improved thermoelectric performance of Bi2Se3 alloyed Bi2Te3 thin films via low pressure chemical vapour depositioncitations
- 2020Improved thermoelectric performance of Bi 2 Se 3 alloyed Bi 2 Te 3 thin films via low pressure chemical vapour depositioncitations
- 2018Electrodeposition of a functional solid state memory material – germanium antimony telluride from a non-aqueous plating bathcitations
- 2016Haloplumbate salts as reagents for the non-aqueous electrodeposition of leadcitations
- 2016A versatile precursor system for supercritical fluid electrodeposition of main-group materialscitations
- 2016Nanoscale arrays of antimony telluride single crystals by selective chemical vapor depositioncitations
- 2015Chemical vapour deposition of antimony chalcogenides with positional and orientational control: precursor design and substrate selectivitycitations
- 2015Aza-macrocyclic complexes of Group 1 cations:synthesis, structures and density functional theory studycitations
- 2015Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5phase change memorycitations
- 2015A Versatile Precursor System for Supercritical Fluid Electrodeposition of Main-Group Materialscitations
- 2015Phase-change memory properties of electrodeposited Ge-Sb-Te thin filmcitations
- 2014Niobium(v) and tantalum(v) halide chalcogenoether complexes – towards single source CVD precursors for ME2thin filmscitations
- 2013Non-aqueous electrodeposition of metals and metalloids from halometallate saltscitations
- 2013Low pressure chemical vapour deposition of crystalline Ga2Te3 and Ga2Se3 thin films from single source precursors using telluroether and selenoether complexescitations
- 2013Telluroether and selenoether complexes as single source reagents for low pressure chemical vapor deposition of crystalline Ga2Te3 and Ga2Se3 thin filmscitations
- 2013Chromium(V) oxide trichloride, and some pentachlorido-oxido-chromate(V) salts: structures and spectroscopic characterizationcitations
- 2012Highly selective chemical vapor deposition of tin diselenide thin films onto patterned substrates via single source diselenoether precursorscitations
- 2011Chemical vapor deposition of GaP and GaAs thin films from [nBu2Ga(µ-EtBu2)2GanBu2] (E= P or As) and Ga(PtBu2)3citations
- 2010Synthesis and structure of [{C7F15CO2}2AgAu(PPh3)]2 and its use in electrodeposition of gold–silver alloyscitations
- 2009Spectroscopic and Vanadium K-Edge EXAFS Studies on VO2Cl and the Crystal Structure of [{Cl2VO(O2PCl2)(POCl3)}2]citations
- 2009Electrodeposition of metals from supercritical fluidscitations
Places of action
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article
Electrodeposition of a functional solid state memory material – germanium antimony telluride from a non-aqueous plating bath
Abstract
The electrodeposition of germanium antimony telluride (GST) alloys from a single non-aqueous plating bath based on tetrabutylammonium chlorometallate precursors is presented. The system provides a case-study for plating bath optimization in order to produce complex functional materials. GST deposits in the amorphous phase and the film composition and morphology can be readily adjusted by tuning the three precursor concentrations and the electrodeposition potential. Adjustment of the precursor concentrations allows the preparation of deposits ranging from the binaries (GeSb, GeTe, Sb2Te3) to ternaries with a wide range of compositions, including the standard Ge2Sb2Te5 composition – more commonly known as GST-225 – which is widely used in the solid state memory industry. <br/><br/>In this paper we present a detailed study discussing the complex interplay between the deposition of germanium, antimony and tellurium and how adjusting the concentrations of their chlorometallates allows control over the composition and also the morphology of the deposits. We also highlight the benefits that arise from the wide separation in the deposition potentials for the three precursors, and in particular the ability to control the composition through modulation of the deposition potential.<br/>