| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Makkonen, Ilja
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2022A combined experimental and theoretical study of small and large vacancy clusters in tungstencitations
- 2020Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnxcitations
- 2020Segregation of Ni at early stages of radiation damage in NiCoFeCr solid solution alloyscitations
- 2020Ti-Sr antisitecitations
- 2020Ti-Sr antisite : An abundant point defect in SrTiO3citations
- 2020Source/Drain Materials for Ge nMOS Devices : Phosphorus Activation in Epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnxcitations
- 2020Source/Drain Materials for Ge nMOS Devicescitations
- 2019Evolution of phosphorus-vacancy clusters in epitaxial germaniumcitations
- 2019Ga vacancies and electrical compensation in beta-Ga2O3 thin films studied with positron annihilation spectroscopycitations
- 2019Heavily phosphorus doped germanium:Strong interaction of phosphorus with vacancies and impact of tin alloying on doping activationcitations
- 2019Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopycitations
- 2017Positron annihilation analysis of the atomic scale changes in oxidized Zircaloy-4 samplescitations
- 2016Review-Defect Identification with Positron Annihilation Spectroscopy in Narrow Band Gap Semiconductorscitations
- 2016Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germaniumcitations
- 2015Increased p-type conductivity in GaNxSb1-x, experimental and theoretical aspectscitations
- 2007Modeling momentum distributions of positron annihilation radiation in solids ; Positroniannihilaatiosäteilyn liikemääräjakaumat kiinteissä aineissa: elektronirakenneohjelmiin perustuva mallinnuscitations
Places of action
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article
Review-Defect Identification with Positron Annihilation Spectroscopy in Narrow Band Gap Semiconductors
Abstract
Point defects play an important role in present day semiconductor devices. Their ability to influence both the electrical and optical properties of a semiconductor together with the decreasing device size, makes the knowledge of their nature a crucial ingredient in the applicability of a specific semiconductor material. There are very few experimental techniques that alone can identify and quantify point defects. In this review, we show how positron annihilation spectroscopy combined with density functional theory calculations can be used in narrow bandgap semiconductors to identify point defects. Examples are presented of defect identification in both traditional semiconductors (Ge), compound bulk semiconductors (GaSb) and epitaxial layers (GaSb and InN).