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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Varpula, Aapo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2018Rapid Thermal Characterization of Materials with Ultra-High Resolution of Droplet Size Specimens using the Three-Omega Methodcitations
- 2018Silicon nano-thermoelectric detectors for for sensing and instrumentation applications
- 2018Microfabricated sensor platform with through-glass vias for bidirectional 3-omega thermal characterization of solid and liquid samplescitations
- 2018Thermal characterization of liquid and solid samples using a measurement platform for the bidirectional 3-omega method
- 2017Thermoelectric thermal detectors based on ultra-thin heavily doped single-crystal silicon membranescitations
- 2015Nondestructive characterization of fusion and plasma activated wafer bonding using mesa and recess structurescitations
- 2011Electrical properties of granular semiconductors : modelling and experiments on metal-oxide gas sensorscitations
- 2011A compact quantum statistical model for the ballistic nanoscale MOSFETscitations
- 2010Magnetic polarons in ferromagnetic semiconductor single-electron transistorscitations
- 2010Atomic layer deposition of tin dioxide sensing film in microhotplate gas sensorscitations
- 2010Modelling of dc characteristics for granular semiconductorscitations
- 2010Small-signal analysis of granular semiconductorscitations
- 2010Modeling of transient electrical characteristics for granular semiconductorscitations
Places of action
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article
Nondestructive characterization of fusion and plasma activated wafer bonding using mesa and recess structures
Abstract
We present two methods for characterization of wafer bonding. They are based on recess and mesa bond test structures with various shapes, measurement of unbonded regions using scanning acoustic microscopy (SAM), and image analysis. The first method maps locally the surface energy across the bonded wafers using the measured deformations around these structures and the finite element method (FEM). The FEM analysis is supported by analytical modeling. The second method uses the measured bonding probabilities of 10-19 nm deep recess bond test structures in investigation of surface interactions and in determination of the average of the surface energy at the wafer level. The present methods and proposed optimized test structures allow the evaluation of surface cleans without destructive, off-line methods such as the crack-opening method, which is employed as a reference. The methods are utilized in the investigation of the effect of O<sub>2</sub> and N<sub>2</sub> plasma activation and the dilution and temperature of Standard Clean 1 on Si/SiO<sub>2</sub> direct bonding. The results from both methods correlate with each other. The bond strength of the annealed wafers is observed to increase in the order 1) O<sub>2</sub> plasma, 2) standard SC1 at 65°C, 3) N<sub>2</sub> plasma, and 4) dilute SC1 at 45°C.