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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Park, Seongjun
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Publications (3/3 displayed)
- 2022A 200 x 256 Image Sensor Heterogeneously Integrating a 2D Nanomaterial-Based Photo-FET Array and CMOS Time-to-Digital Converterscitations
- 2015Dual Mode Photocurrent Generation of Graphene-Oxide Semiconductor Junctioncitations
- 2015Wide-Range Controllable n-Doping of Molybdenum Disulfide (MoS2) through Thermal and Optical Activationcitations
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article
Dual Mode Photocurrent Generation of Graphene-Oxide Semiconductor Junction
Abstract
The need for low-cost and highly versatile photosensing devices keeps increasing. In this work, we present a heterojunction device based on wafer-scale graphene grown by chemical vapor deposition (CVD) and sputtered InGaZnO (IGZO) semiconductor for dual mode photocurrent collection. The photocurrent can be collected either from the lateral gold/graphene/gold configuration or from the vertical graphene/IGZO/nickel heterojunction configuration with no external bias. Incident-energy-dependent photocurrent scanning microscopy shows that the dominant photocarriers are formed at the edge of the gold electrode through photo-thermoelectric hot hole generation in the lateral configuration. Vertical mode renders unidirectional current flow by photoexcited electrons in the IGZO and the subsequent relaxation and diffusion due to Fowler-Nordheim potential. © 2015 The Electrochemical Society. All rights reserved.