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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Santos, Hugo
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (2/2 displayed)
- 2023Diphenyl ditelluride assisted synthesis of noble metal-based silver-telluride 2D organometallic nanofibers with enhanced aggregation-induced emission (AIE) after oleylamine treatment
- 2022The Substrate Morphology Effect for Sulfur-Rich Amorphous Molybdenum Sulfide for Electrochemical Hydrogen Evolution Reactioncitations
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article
The Substrate Morphology Effect for Sulfur-Rich Amorphous Molybdenum Sulfide for Electrochemical Hydrogen Evolution Reaction
Abstract
<jats:p>Amorphous molybdenum sulfide (MoS<jats:sub>x</jats:sub>) is a promising material for hydrogen evolution reaction (HER) due to its nearly zero hydrogen adsorption free energy at the sulfur (S) edge-sites. To prepare more efficient MoS<jats:sub>x</jats:sub>-based electrocatalysts, new attempts are required to increase the exposure of the MoS<jats:sub>x</jats:sub> lateral size and, therefore, increase the S atom’s contents. The majority of studies reported in the literature investigate MoS<jats:sub>x</jats:sub> over conductive substrates. However, MoS<jats:sub>x</jats:sub> can be electrodeposited over inexpensive and chemically stable platforms, such as semiconductors. This work presents the semiconductor substrate morphology effect for prepared sulfur-rich MoS<jats:sub>x</jats:sub> for electrochemical hydrogen evolution reaction. The electrodes are prepared by cyclic voltammetry with 25 cycles over TiO<jats:sub>2</jats:sub> film and TiO<jats:sub>2</jats:sub> nanotubes (TiO<jats:sub>2</jats:sub>NT) substrates. The MoS<jats:sub>x</jats:sub> deposit on TiO<jats:sub>2</jats:sub>NT presents an increase S atoms contents and exhibits excellent HER activity with a low overpotential of 93 ± 7.5 mV to reach −10 mA cm<jats:sup>−2</jats:sup> and a higher exchange current density equal to 91 <jats:italic>μ</jats:italic>A cm<jats:sup>−2</jats:sup>, and a smaller Tafel slope of 43 mV dec<jats:sup>−1</jats:sup>.</jats:p>