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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Onaya, Takashi
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Publications (4/4 displayed)
- 2023(Invited) Fabrication Technique of Ferroelectric Hf<sub>x</sub>Zr<sub>1−X</sub>O<sub>2</sub> Thin Films Using ALD-ZrO<sub>2</sub> Nucleation Layerscitations
- 2021Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiO<i>x</i> capacitors using plasma-enhanced atomic layer depositioncitations
- 2017Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitorscitations
- 2016Role of High-k Interlayer in ZrO<sub>2</sub>/High-k/ZrO<sub>2</sub> Insulating Multilayer on Electrical Properties for DRAM Capacitorcitations
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article
(Invited) Fabrication Technique of Ferroelectric Hf<sub>x</sub>Zr<sub>1−X</sub>O<sub>2</sub> Thin Films Using ALD-ZrO<sub>2</sub> Nucleation Layers
Abstract
<jats:p>The crystallinity and electrical properties of ferroelectric Hf<jats:sub>0.43</jats:sub>Zr<jats:sub>0.57</jats:sub>O<jats:sub>2</jats:sub> (HZO) thin films fabricated using atomic layer deposited ZrO<jats:sub>2</jats:sub> nucleation layers (ZrO<jats:sub>2</jats:sub>-NLs) were systematically studied. The remanent polarization (2<jats:italic>P</jats:italic><jats:sub>r</jats:sub>= 29 µC/cm<jats:sup>2</jats:sup>) and dielectric constant (<jats:italic>k</jats:italic> = 32) of the TiN/HZO (10 nm)/TiN capacitors inserting the top- and bottom-ZrO<jats:sub>2</jats:sub>-NLs (D-ZrO<jats:sub>2</jats:sub>) were significantly higher than those (2<jats:italic>P</jats:italic><jats:sub>r</jats:sub>= 12 µC/cm<jats:sup>2</jats:sup> and <jats:italic>k</jats:italic> = 24) without (w/o) ZrO<jats:sub>2</jats:sub>-NL. Moreover, the crystal structure of HZO films was found to correlate with 2<jats:italic>P</jats:italic><jats:sub>r</jats:sub>and <jats:italic>k</jats:italic>. These characteristics were dominantly due to the epitaxial-like grain growth of the HZO film on the top- and bottom-ZrO<jats:sub>2</jats:sub>-NLs. D-ZrO<jats:sub>2</jats:sub> exhibited a lower leakage current density compared with that of w/o, owing to the larger total thickness including the double ZrO<jats:sub>2</jats:sub>-NLs (4.0 nm). Furthermore, D-ZrO<jats:sub>2</jats:sub> showed superior endurance properties than w/o. Therefore, fabrication technique of ferroelectric HZO films using ZrO<jats:sub>2</jats:sub>-NL is one of promising methods for future ferroelectric memory device applications.</jats:p>