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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Martinez, Eugenie
Atomic Energy and Alternative Energies Commission
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2024Passivating and low damaging plasma etching of GaN using Cl 2 and SiCl 4 for recessed gate MOSc-HEMT devicescitations
- 2022Hydrophobic films surface preparation and its impact on wet cleaningcitations
- 2019Microscopic Mechanisms of Local Interfacial Resistive Switching in LaMnO 3+δcitations
- 2016In situ cleaning of InGaAs surfaces prior to low contact resistance metallizationcitations
- 2015In situ cleaning/passivation of surfaces for contact technology on III-V materials
Places of action
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article
Hydrophobic films surface preparation and its impact on wet cleaning
Abstract
International audience ; The cleaning of hydrophobic films is a key challenge for yield. Such films are prone to drying marks formation during aqueous cleaning steps. In the present work, we study how surface preparation can break non-polar bonds, resulting in a hydrophilic surface. Several treatments (ultraviolet, Standard Clean 1 and ozonated water) and materials (amorphous carbon, silicon carbon nitride) have been studied. A specific work on Silicon carbon nitride surface modification with ozonated water has been initiated with X-ray photoelectron spectroscopy. We have evaluated the interest that such step has prior to aqueous wafer cleaning and the possible consequences on electrical properties and surface energy. Further investigations will be required to evaluate the impact and interest of such a step on microelectronic process integration.