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Raeissi, Bahman
University of Oslo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2011Characterization of Traps in the Transition Region at the HfO2/SiOx Interface by Thermally Stimulated Currentscitations
- 2010Charge carrier traffic at interfaces in nanoeletronic structures
- 2009Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitorscitations
- 2008High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopycitations
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document
Characterization of Traps in the Transition Region at the HfO2/SiOx Interface by Thermally Stimulated Currents
Abstract
Thermally stimulated currents (TSCs) have been measured to investigate electron traps in HfO2 prepared by reactive sputtering on silicon. Broken planes of the silicon crystal, which may contribute to the occurrence of interface states, were identified between the silicon and SiOx interlayer by transmission electron microscopy (TEM). A second domain was found between SiOx and HfO2 constituting a gradual transition region between the two oxides. This interface region was found to be a source of unstable charge traps where captured electrons interact with the silicon energy states through a combined tunneling and thermal process.