• Sysak, Matthew
• Heck, John
• Thourhout, Dries Van
• Stanković, Stevan
• Roelkens, Gunther
• Jones, Richard

Abstract

<jats:p>Heterogeneous integration of III-V semiconductor materials on the SOI (silicon-on-insulator) platform is a promising method for fabrication of active photonic devices. It requires a reliable and robust bonding procedure that also enables an effective optical coupling between III-V layers and SOI waveguides. Molecular bonding is usually used for this purpose, but due to its strict requirements for contamination-free and smooth bonding surfaces, it might not be sufficiently robust for industrial-scale fabrication. As an alternative technique, in this paper we present an adhesive bonding procedure based on the use of DVS-BCB. We developed a die-to-die adhesive bonding procedure, resulting in less than 100nm-thick bonding layers thereby enabling evanescent optical coupling between III-V layers and silicon waveguides. The process shows very good robustness and bonding strength (brake-down shear stress of 2MPa). In perspective, we plan to scale-up the process to a multiple die-to-wafer bonding procedure which would be suitable for industrial-scale fabrication.</jats:p>

Topics

• impedance spectroscopy
• surface
• laser emission spectroscopy
• strength
• Silicon
• III-V semiconductor