• Takagi, Shinichi
• Yokoyama, Masafumi
• Nakano, Yoshiaki
• Fukuhara, Noboru
• Sugiyama, Masakazu
• Takenaka, Mitsuru
• Hata, Masahiko
• Takagi, Hideki
• Urabe, Yuji
• Yasuda, Tetsuji
• Yamada, Hisashi

Abstract

<jats:p>Integration of III-V semiconductor compounds into Si wafers has been paid match attention because of requirements of the high electron mobility and low effective mass channel materials instead of Si and requirements for monolithic integration of the electrical and optical integration. However, it has been still challenging due to several differences between III-V semiconductor compounds and Si in material properties: lattice constant, thermal tolerance, and material toughness. Therefore, for fabricating thin body III-V-on-insulator (III-V-OI) on Si wafers with retaining the high crystal quality, we have developed low damage and low temperature direct wafer bonding (DWB) processes using buried oxide protection layers. We have demonstrated high electron channel mobility thin body III-V-OI metal-oxide-semiconductor field-effect transistors (MOSFETs) on Si substrates. The transistor property has exceeded the Si MOSFETs and comparable to the bulk III-V MOSFETs, indicating that we can transfer the high crystal quality III-V-OI channel layers using these DWB processes.</jats:p>

Topics

• compound
• mobility
• III-V semiconductor