• Takagi, Shinichi
• Yokoyama, Masafumi
• Takenaka, Mitsuru
• Hata, Masahiko
• Takagi, Hideki
• Urabe, Yuji
• Yasuda, Tetsuji
• Yamada, Hisashi

Abstract

<jats:p>The heterogeneous integration of III-V semiconductors and Ge with Si wafers is expected to provide high performance logic CMOS under future technology nodes and other novel system-on-a -chip (SoC) applications. The III-V-On-Insulator (III-V-OI) structure fabricated by the wafer bonding technique is quite promising for realizing this heterogeneous integration for future LSIs. In this paper, we introduce our fabrication of InGaAs-OI structures with buried oxides (BOX) of ECR-SiO2 and ALD-Al2O3 by the direct wafer bonding and demonstrate the InGaAs-OI MOSFET operation on the Si substrates. The importance of the interface quality between InGaAs and BOX is addressed through the electron mobility behaviors. This technique is quite promising for the fabrication of novel CMOS device application under the 15 nm technology node and beyond.</jats:p>

Topics

• impedance spectroscopy
• mobility
• III-V semiconductor