• Jouili, Mohamed
• Andrieux, Michel
• Gallet, Isabelle
• Prudhomme, Nathalie
• Ji, Vincent

Abstract

<jats:p>Zirconia films were deposited by MOCVD using Zr2(OiPr)6(thd)2 on silicon substrate under different pressures. They were characterized for crystalline structure, crystallite size (~5-6 nm) by Grazing incidence X-ray diffraction and by FEG-SEM for microstructure and morphology. GIXRD patterns showed the predominance of the tetragonal phase (or cubic). The intensities ratio of the diffraction peaks between (111)t-c and (200)t c lattice planes increased with the pressure and, consequently, with the film thickness. The films morphology, as well as the stress levels in such ZrO2 films were different as a function of their thickness: compressive growth stress in the thinner layers and tensile growth stress for the thick one. A high peak intensity was observed at the center of the {200} pole figures showing that the majority of the surfaces plane were parallel to (100) plane.</jats:p>

Topics

• microstructure
• morphology
• surface
• phase
• scanning electron microscopy
• x-ray diffraction
• texture
• Silicon