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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hämäläinen, Jani Marko Antero
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2020Van der Waals epitaxy of continuous thin films of 2D materials using atomic layer deposition in low temperature and low vacuum conditionscitations
- 2019How insignificant modifications of photocatalysts can significantly change their photocatalytic activitycitations
- 2018Rhenium Metal and Rhenium Nitride Thin Films Grown by Atomic Layer Depositioncitations
- 2018Atomic Layer Deposition of Rhenium Disulfidecitations
- 2016Atomic Layer Deposition of Metal Phosphates and Lithium Silicates
- 2016Atomic Layer Deposition of Iridium Thin Films Using Sequential Oxygen and Hydrogen Pulsescitations
- 2016Nucleation and conformality of iridium and iridium oxide thin films grown by atomic layer depositioncitations
- 2014Atomic Layer Deposition of Noble Metals and Their Oxidescitations
- 2013Low temperature atomic layer deposition of noble metals using ozone and molecular hydrogen as reactantscitations
- 2012Study of amorphous lithium silicate thin films grown by atomic layer depositioncitations
- 2012Lithium Phosphate Thin Films Grown by Atomic Layer Depositioncitations
- 2012Atomic layer deposited iridium oxide thin film as microelectrode coating in stem cell applicationscitations
- 2011Iridium metal and iridium oxide thin films grown by atomic layer deposition at low temperaturescitations
- 2011Atomic Layer Deposition and Characterization of Aluminum Silicate Thin Films for Optical Applicationscitations
- 2010pH electrode based on ALD deposited iridium oxidecitations
- 2009Metallic Ir, IrO2 and Pt Nanotubes and Fibers by Electrospinning and Atomic Layer Deposition
- 2009Study on atomic layer deposition of amorphous rhodium oxide thin filmscitations
- 2009Atomic layer deposition of iridium thin films by consecutive oxidation and reduction stepscitations
- 2008Atomic layer deposition of iridium oxide thin films from Ir(acac)₃ and ozonecitations
- 2008Atomic layer deposition of platinum oxide and metallic platinum thin films from Pt(acac)₂ and ozonecitations
Places of action
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article
Study on atomic layer deposition of amorphous rhodium oxide thin films
Abstract
Atomic layer deposition (ALD) of rhodium oxide thin films was studied using Rh(acac)(3) [acetylacetonato (acac)] and ozone as precursors. Amorphous Rh2O3 thin films were deposited between 160 and 180 degrees C. The sublimation temperature of Rh(acac)(3) set the low temperature limit for the oxide film deposition, while the high temperature limit was governed by the partial reduction of the film to metallic rhodium. The rhodium oxide films were successfully deposited on Al2O3 nucleation layers, soda lime glasses, and native oxide-covered silicon substrates. The films demonstrated excellent conformallity as a characteristic to ALD. The films were not uniform across the substrate, which was most likely due to the catalyzing effect of Rh2O3 for ozone decomposition. However, the nonuniformity was repeatable and could simply be compensated in the cross-flow reactor. By splitting the deposition in two stages with 180 degrees substrate rotation in between, good uniformity across the substrate was accomplished. The resistivities of about 80 nm thick Rh2O3 films were from 5 to 8 m Omega cm. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3190157] All rights reserved.