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Smith, D. C.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2011Metal catalyst-free growth of carbon nanotubes and their application in field effect transitors
- 2011Metal-catalyst-free growth of carbon nanotubes and their application in field-effect transistors
- 2011Metal-catalyst-free growth of silica nanowires and carbon nanotubes using Ge nanostructures
- 2010Chemical Vapour Deposition of CNTs Using Structural Nanoparticle Catalysts
- 2009Growth of single-walled carbon nanotubes using germanium nanocrystals formed by implantationcitations
- 2005Metal catalyst-free low-temperature carbon nanotube growth on SiGe islandscitations
- 2005Catalyst free low temperature direct growth of carbon nanotubes on SiGe islands and Ge quantum dots
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article
Growth of single-walled carbon nanotubes using germanium nanocrystals formed by implantation
Abstract
This paper presents a complementary metal oxide semiconductor compatible method for the chemical vapor deposition of singlewalled carbon nanotubes. The method uses Ge implantation into a SiO2 layer to create Ge nanocrystals, which are then used to produce SWNTs. The results of atomic force microscopy and scanning electron microscopy analyses indicate that Ge implantation provides good control of particle size and delivers a well-controlled SWNT growth process. The SWNT area density of 4.1 +- 1.2 um in length/um2 obtained from the Ge nanocrystals is comparable to that obtained from metal-catalyst-based methods used to fabricate SWNT field-effect transistors. A carbon implantation after Ge nanocrystal formation significantly enhances the process operating window for the growth of the SWNTs and increases the area density.