• Auvray, Laurent
• Daniele, Stephane
• Salicio, Olivier
• Lhostis, Sandrine
• Ducroquet, Frederique
• Rozier, Yohann
• Dubourdieu, Catherine

Abstract

<jats:p>SrTiO3, which has a very high dielectric permittivity κ in the form of bulk material (κ ~ 300), has been considered as a potential candidate for the replacement of SiO2-based gate oxide in future CMOS transistors and as a promising dielectric for next generations of DRAM capacitors. Like all perovskite-type oxides, optimized properties require a stringent control of the composition and of the interfaces with the electrodes. Here, we address issues such as the stoichiometry control of the films synthesized by metal organic chemical vapor deposition and the interface engineering on Si/SiO2 through the precursor chemistry. The silicate layer formed at 700{degree sign}C can be minimized and even suppressed. The dielectric properties are discussed with respect to thickness and composition. Although the perovskite phase is obtained for a large range of Sr/Ti ratio in the films, optimal dielectric properties are obtained in a very narrow range for Sr-deficient films.</jats:p>

Topics

• perovskite
• impedance spectroscopy
• phase
• chemical vapor deposition