| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Selberherr, Siegfried
TU Wien
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2022Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach
- 2020Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAMcitations
- 2016Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stresscitations
- 2014Microstructural Impact on Electromigration: A TCAD Studycitations
- 2013Multiple Purpose Spin Transfer Torque Operated Devices
- 2013strain induced reduction of surface roughness dominated spin relaxation in mosfetscitations
- 2011perspectives of silicon for future spintronic applications from the peculiarities of the subband structure in thin films
- 2011Modeling Electromigration Lifetimes of Copper Interconnectscitations
- 2009valley splitting in thin silicon films from a two band k p model
- 2009The Effect of Microstructure on Electromigration-Induced Failure Developmentcitations
- 2009thickness dependence of the effective masses in a strained thin silicon filmcitations
- 2009Analysis of Electromigration in Dual-Damascene Interconnect Structures
- 2007Electromigration Modeling for Interconnect Structures in Microelectronics
Places of action
| Organizations | Location | People |
|---|
article
Electromigration Modeling for Interconnect Structures in Microelectronics
Abstract
<jats:p>Electromigration is one of the most important reliability issues in semi- conductor technology. Its complex character demands comprehensive phys- ical modeling as basis for analysis. Simulation of electromigration induced interconnect failure focuses on the life-cycle of intrinsic voids, which con- sists of two distinct phases: void nucleation and void evolution. We present models for both phases as well as models which describe the impact of metal microstructure and mechanical stresses. These stresses have their sources in the fabrication process itself and in the material transport caused by elec- tromigration. Special emphasis is put on explaining the void morphology and its impact on interconnect resistance. Investigations for common two- and three-dimensional interconnect structures are presented. Implications of the theoretical analysis and the simulation results for modern intercon- nect design are discussed.</jats:p>