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| Naji, M. |
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| Motta, Antonella |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Ali, M. A. |
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| Azevedo, Nuno Monteiro |
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Gareso, P. L.
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Publications (3/3 displayed)
- 2019Synthesis and Characterization of Ni-doped ZnO Thin Films Grown by Sol-Gel Spin Coatingcitations
- 2017The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diodes
- 2006Effect of rapid thermal annealing on the atomic intermixing of Zn- and C-doped InGaAs/AlGaAs quantum well laser structurescitations
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article
Effect of rapid thermal annealing on the atomic intermixing of Zn- and C-doped InGaAs/AlGaAs quantum well laser structures
Abstract
<p>We have studied the effect of annealing on the atomic intermixing of Zn- and C-doped InGaAs/AlGaAs laser structures. Electrochemical capacitance voltage measurements revealed that the carrier concentration in the Zn-doped GaAs contact layers decreased after annealing at 900°C for 60 s. indicating that some of the Zn acceptors were passivated or outdiffused from the surface, whereas in the C-doped samples there was an increase of the camer concentration after annealing. This latter was confirmed by X-ray rocking curve results where there was an increase in the amount of lattice contraction associated with the presence of the substitutional carbon C<sub>As</sub> after annealing. Secondary ion mass spectroscopy revealed that the Zn diffused significantly from the top layers to the rest of the structures after annealing at 925 °C, but the SIMS profile did not change significantly for C-doped samples with annealing. This indicates that Zn has a much higher mobility in comparison to carbon. Photoluminescence measurements after etching the samples to various depths showed similar luminescence defects in both Zn- and C-doped samples. The possible mechanism of atomic intermixing for bom Zn- and C-doped samples are discussed.</p>