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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zhu, Yu
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2011Atomic Layer Deposition of GeTe
- 2007Properties of ultrathin platinum deposited by atomic layer deposition for nanoscale copper-metallization schemescitations
- 2006Copper Electroplating on Zero-Thickness ALD Platinum for Nanoscale Computer Chip Interconnectscitations
- 2006Platinum Liner Deposited by Atomic Layer Deposition for Cu Interconnect Applicationcitations
- 2004Atomic layer deposition of tantalum nitride for ultrathin liner applications in advanced copper metallization schemescitations
- 2003Enhancement of Copper Wetting via Surfactant-Based Post-Treatment of Ultra-Thin Atomic Layer Deposited Tantalum Nitride Liners
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article
Platinum Liner Deposited by Atomic Layer Deposition for Cu Interconnect Application
Abstract
<jats:p>Ultra-thin platinum films have a wide range of nanoscaleapplications including seed layer for electrochemicaldeposition of copper for integrated circuit interconnects.Atomic layer deposition of platinum provides a uniform andcontinuous conductive surface for subsequent Cuelectroplating. A thermal metal-organic atomic layerdeposition approach was developed for the growth of ultra-thinplatinum films by alternating pulses of(methylcyclopentadienyl)trimethylplatinum and oxygen. Theplatinum films were deposited in-situ on atomic layerdeposited tantalum nitride films. The ALD process wasoptimized by investigating growth rate saturation as afunction of individual reactant exposures as controlled by thelength of reactant pulses and the duration of the inert gaspurge cycles separating the reactant pulses. Subsequentelectrochemical deposition of Cu was demonstrated on ultra- thin Pt films.</jats:p>