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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Niskanen, Antti
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2007Radical-enhanced atomic layer deposition of silver thin films using phosphine-adducted silver carboxylatescitations
- 2007Radical enhanced atomic layer deposition of titanium dioxidecitations
- 2005Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Filmscitations
- 2000Reactively sputtered Ta2N and TaN diffusion barriers for copper metallization
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article
Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films
Abstract
Radical-enhanced atomic layer deposition (REALD) of metallic copper films from copper(II)acetylacetonate and hydrogen radicals was studied. For this work, a new kind of REALD reactor was developed by adding a surface-wave launcher type of microwave plasma source to an inert gas-valved flow-type ALD reactor. The copper films, grown at 140degreesC, were polycrystalline, exhibited low resistivity, 15 muOmega cm for a 25 nm thick film, and had relatively low impurity levels. The films had excellent adhesion, and they grew conformally. The successful incorporation of the radical source to the ALD reactor encourages the study of other challenging ALD processes. (C) 2004 The Electrochemical Society.