| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Buca, Dan
Forschungszentrum Jülich
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Full Picture of Lattice Deformation in a Ge<sub>1 − x</sub>Sn<sub>x</sub> Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024Full Picture of Lattice Deformation in a Ge 1-x Sn x Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductorscitations
- 2024Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductorscitations
- 2024The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale
- 2023Isothermal Heteroepitaxy of Ge1-xSnx Structures for Electronic and Photonic Applicationscitations
- 2023Isothermal Heteroepitaxy of Ge 1- x Sn x Structures for Electronic and Photonic Applicationscitations
- 2022(Si)GeSn Isothermal Multilayer Growth for Specific Applications Using GeH<sub>4</sub> and Ge<sub>2</sub>H<sub>6</sub>
- 2020(Invited) Tensile Strain Engineering and Defects Management in GeSn Laser Cavitiescitations
- 2018Advanced GeSn/SiGeSn Group IV Heterostructure Laserscitations
- 2017Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contactscitations
- 2013Dense Ge nanocrystal layers embedded in oxide obtained by controlling the diffusion–crystallization processcitations
- 2013Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealingcitations
- 2010Elastic strain and dopant activation in ion implanted strained Si nanowirescitations
Places of action
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document
(Invited) Tensile Strain Engineering and Defects Management in GeSn Laser Cavities
Abstract
<jats:p>Recent achievements of direct band gap with germanium by alloying with tin or by tensile strain engineering has enabled multiple times demonstration of laser emission in the 2-4µm wavelength range. This fast and promising emergence of CMOS-compatible laser technology in the Mid-IR faces, however, major issues, e.g., high power density of thresholds, hindering the aim to be integrated on a silicon chip and develop low cost sensing and/or Datacom devices. In this report we show that combining both tensile strain and Sn alloying can effective engineer the material band structure and its optical gain properties. We also evidence the importance of defects management on GeSn lasing characteristics, beyond the band structure engineering. We discuss the potential of GeSnOI technology to address above aspects, which enabled to drastically reduce the lasing thresholds in microdisk laser cavities and reach continuous-wave operation in GeSn active media.</jats:p>