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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Halsall, Mp
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Topics
Publications (8/8 displayed)
- 2021Passivation of thermally-induced defects with hydrogen in float-zone siliconcitations
- 2018Graphene oxide films for field effect surface passivation of silicon for solar cellscitations
- 2018Deep-level analysis of passivation of transition metal impurities in siliconcitations
- 2013Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generationcitations
- 2013Size limit on the phosphorous doped silicon nanocrystals for dopant activationcitations
- 2010Formation of Si-nanocrystals in SiO2 via ion implantation and rapid thermal processingcitations
- 2010Structure and luminescence of rare earth-doped silicon oxides studied through their X-ray absorption near edge structure and X-ray excited optical luminescencecitations
- 2001Investigation into the deformation of carbon nanotubes and their composites through the use of Raman spectroscopycitations
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document
Deep-level analysis of passivation of transition metal impurities in silicon
Abstract
The transition metals (TMs) from 3d and 4d series are very effective recombination centers in silicon. They are harmful for some electronic devices and Si solar cells and should be either neutralized or removed from active areas of the devices. Some of the TMs have low diffusivities, so their gettering is difficult. In this paper we present experimental results on the interactions of transition metals with hydrogen atoms in silicon and on passivation by the displacement of the metals from the interstitial to the substitutional site. The results have been obtained by means of deep level transient spectroscopy. We have studied iron, titanium and vanadium from the 3d series, and Mo from the 4d series. It is found that in the presence of excess vacancies 3d TMs tend to move to substitutional sites and are quite stable in this position with no or much reduced recombination activity and reduced diffusion. Hydrogen reactions with TMs are found to be dependent on the charge states of the reacting species. It is shown that H-TM reactions in p-type Si can be facilitated by manipulating charge states of the reacting species using several techniques.