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Trajnerowicz, Artur
in Cooperation with on an Cooperation-Score of 37%
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article
(Invited) Manufacturing Microwave AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Truly Bulk Semi-Insulating GaN Substrates
Abstract
<jats:p>The substrate of choice for high power microwave GaN-based devices is silicon carbide. However recently novel semi-insulating truly bulk GaN substrates with excellent crystalline and electrical parameters have been developed by Ammono S..A. These allow to elaborate AlGaN/GaN heterostructures with high electron mobility values and density of two-dimensional electron gas. Developed processing steps, especially planar isolation by ion implantation and formation of low resistivity regrown ohmic contacts enabled fabrication of high quality devices. An 1000 mA/mm on-state current density along with low 4.4 Ω/mm on-state resistance were achieved. For the devices with rectangular, 0.8 μm gate length the f<jats:sub>MAG</jats:sub> and f<jats:sub>s</jats:sub> were 31 GHz and 22 GHz.The maximum output power density was more than 4.15 W/mm in S-band.</jats:p>