| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Swarnakar, Akhilesh Kumar
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2018Phase Evolution and Mechanical Properties of AlCoCrFeNiSix High-Entropy Alloys Synthesized by Mechanical Alloying and Spark Plasma Sinteringcitations
- 2017ANALYSIS OF DYNAMIC YOUNG'S MODULUS AND DAMPING BEHAVIOR OF ZrB<sub>2</sub>-SiC COMPOSITES BY THE IMPULSE EXCITATION TECHNIQUE
- 2014Temperature Dependent Young's Modulus of Si and Gecitations
- 2013Diamond dispersed Si3N4 composites obtained by pulsed electric current sinteringcitations
- 2011Nanostructured MoSx-based thin films obtained by electrochemical reductioncitations
- 2011Young's modulus and damping in dependence on temperature of Ti-6Al-4V components fabricated by shaped metal depositioncitations
- 2010HYDROTHERMAL STABILITY OF YTTRIA AND NEODYMIA CO-STABILISED ZRO2 AND ZRO2 BASED COMPOSITES
- 2009Shaped metal deposition of Ti: Microstructure and mechanical properties
- 2008Pulsed electric current sintering of electrically conductive ceramicscitations
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article
Temperature Dependent Young's Modulus of Si and Ge
Abstract
<jats:p>The vibrational properties of single crystal Si and Ge are studied between room and melting temperature <jats:italic>T</jats:italic><jats:sub><jats:italic>m</jats:italic></jats:sub> using the impulse excitation technique. From the measurements, the temperature dependent Young’s moduli <jats:italic>E</jats:italic><jats:sub><jats:italic><ijk></jats:italic></jats:sub> are extracted in the <100>-, <110>- and <111>- directions. For both semiconductors, the Young’s moduli decrease smoothly with increasing temperature and retain high values up to <jats:italic>T</jats:italic><jats:sub><jats:italic>m</jats:italic></jats:sub>. Using the semi-empiric Wachtman's equation allows an excellent fit to the experimental data for the temperature dependence of <jats:italic>E</jats:italic><jats:sub><jats:italic><100></jats:italic></jats:sub>, <jats:italic>E</jats:italic><jats:sub><jats:italic><110></jats:italic></jats:sub> and <jats:italic>E</jats:italic><jats:sub><jats:italic><111></jats:italic></jats:sub> between room temperature and 0.6<jats:italic>T</jats:italic><jats:sub><jats:italic>m</jats:italic></jats:sub>,. For higher temperatures, the Young's moduli decrease faster than predicted by Wachtman's equation. In the case of Ge, an apparent enhanced softening is observed starting from about 850 ºC which is due to a loss of Ge material, leading to a decrease of sample dimensions and weight.</jats:p>