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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Gardes, Frederic Y.
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 20222D material based optoelectronics by electroplating
- 2019Tuning silicon-rich nitride microring resonances with graphene capacitors for high-performance computing applicationscitations
- 2015Wavelength division demultiplexer and integrated III-V semiconductor Lasers on a silicon photonics platform with microbubble manipulation
- 2015Ge-on-Si plasma enhanced chemical vapor deposition for low cost photodetectorscitations
- 2014Planar surface implanted diffractive grating couplers in SOIcitations
- 2014Locally erasable couplers for optical device testing in silicon on insulatorcitations
- 2014Silicon diffusion engineering in rapid melt growth of silicon-germanium on insulatorcitations
- 2010Carrier depletion based silicon optical modulatorscitations
- 2010Modulators and photodetectors developed in the framework of the European HELIOS project
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article
Silicon diffusion engineering in rapid melt growth of silicon-germanium on insulator
Abstract
In this paper we focus on developing an efficient method to obtain a crystalline SiGe layer on top of an insulator. The method is aimed at enabling the fabrication of different concentration of crystalline SiGe alloy through structure engineering. This technique could enable the alloy composition to be different by design across a single wafer by using a single Germanium deposition step.